Micron Technology 8ATF51264AZ-2G1B1 4GB vs Corsair CMK64GX4M4B3200C16 16GB

总分

Micron Technology 8ATF51264AZ-2G1B1 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

总分

Corsair CMK64GX4M4B3200C16 16GB

Corsair CMK64GX4M4B3200C16 16GB

差异规格评论

差异

Micron Technology 8ATF51264AZ-2G1B1 4GB

需要考虑的原因
Micron Technology 8ATF51264AZ-2G1B1 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 31

左右 6% 更低的延时

Corsair CMK64GX4M4B3200C16 16GB

需要考虑的原因
Corsair CMK64GX4M4B3200C16 16GB

报告一个错误

更快的读取速度，GB/s

17.8 15.8

测试中的平均数值
更快的写入速度，GB/s

14.3 11.8

测试中的平均数值

规格

完整的技术规格清单

Micron Technology 8ATF51264AZ-2G1B1 4GB

Corsair CMK64GX4M4B3200C16 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 31
读取速度，GB/s

15.8 17.8
写入速度，GB/s

11.8 14.3
内存带宽，mbps

17000 17000

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2711 3615

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DDR3 1600 4GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMW32GX4M4A2666C16 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-4000C15-8GVK 8GB

G Skill Intl F4-4000C15-8GVK 8GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

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Micron Technology 4ATF1G64HZ-3G2E2 8GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Crucial Technology BL16G32C16U4B.16FE 16GB

Crucial Technology BL16G32C16U4B.16FE 16GB

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

Corsair CMW32GX4M4C3200C14 8GB

Corsair CMW32GX4M4C3200C14 8GB