Samsung M393B5270CH0-CH9 4GB vs Crucial Technology BL16G32C16S4B.16FE 16GB

总分

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分

Crucial Technology BL16G32C16S4B.16FE 16GB

Crucial Technology BL16G32C16S4B.16FE 16GB

差异规格评论

差异

Samsung M393B5270CH0-CH9 4GB

需要考虑的原因
Samsung M393B5270CH0-CH9 4GB

报告一个错误

Crucial Technology BL16G32C16S4B.16FE 16GB

需要考虑的原因
Crucial Technology BL16G32C16S4B.16FE 16GB

报告一个错误

更快的读取速度，GB/s

16.3 10.6

测试中的平均数值
更快的写入速度，GB/s

14.5 9.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B5270CH0-CH9 4GB

Crucial Technology BL16G32C16S4B.16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 42
读取速度，GB/s

10.6 16.3
写入速度，GB/s

9.0 14.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2423 3072

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

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Samsung 1600 CL10 Series 8GB

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G Skill Intl F4-3000C16-16GSXFB 16GB

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Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Micron Technology 8ATF1G64HZ-2G3E1 8GB

Micron Technology 8ATF1G64HZ-2G3E1 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Patriot Memory (PDP Systems) 3866 C18 Series 8GB

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Peak Electronics 256X64M-67E 2GB

Corsair CMK16GX4M1E3200C16 16GB

Corsair CMK16GX4M1E3200C16 16GB