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Micron Technology 8ATF51264AZ-2G1B1 4GB
Crucial Technology CT4G4DFS824A.C8FF 4GB
比较
Micron Technology 8ATF51264AZ-2G1B1 4GB vs Crucial Technology CT4G4DFS824A.C8FF 4GB
总分
Micron Technology 8ATF51264AZ-2G1B1 4GB
总分
Crucial Technology CT4G4DFS824A.C8FF 4GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF51264AZ-2G1B1 4GB
报告一个错误
更快的写入速度,GB/s
11.8
10.4
测试中的平均数值
需要考虑的原因
Crucial Technology CT4G4DFS824A.C8FF 4GB
报告一个错误
低于PassMark测试中的延时,ns
23
29
左右 -26% 更低的延时
更快的读取速度,GB/s
16.5
15.8
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13 更高的带宽
规格
完整的技术规格清单
Micron Technology 8ATF51264AZ-2G1B1 4GB
Crucial Technology CT4G4DFS824A.C8FF 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
23
读取速度,GB/s
15.8
16.5
写入速度,GB/s
11.8
10.4
内存带宽,mbps
17000
19200
Other
描述
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2711
2537
Micron Technology 8ATF51264AZ-2G1B1 4GB RAM的比较
Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT4G4DFS824A.C8FF 4GB RAM的比较
Kingston KHYXPX-HYJ 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair CMZ8GX3M2A1600C9G 4GB
Smart Modular SMS4TDC3C0K0446SCG 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4266C19-8GTRG 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-2800C16-4GVR 4GB
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Samsung M471B5273EB0-CK0 4GB
Kingston 9965640-015.A00G 32GB
AMD AE34G1601U1 4GB
Kingston KHX3300C16D4/4GX 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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Kingston 9905403-134.A00LF 2GB
Micron Technology 16ATF2G64HZ-2G6J1 16GB
Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-2400C14-4GRK 4GB
报告一个错误
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Bug description
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