Samsung M391B5673EH1-CH9 2GB vs SK Hynix HMA81GR7AFR8N-VK 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

SK Hynix HMA81GR7AFR8N-VK 8GB

SK Hynix HMA81GR7AFR8N-VK 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 49

左右 47% 更低的延时
更快的读取速度，GB/s

12.8 8.8

测试中的平均数值
更快的写入速度，GB/s

9.0 8.4

测试中的平均数值

SK Hynix HMA81GR7AFR8N-VK 8GB

需要考虑的原因
SK Hynix HMA81GR7AFR8N-VK 8GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

SK Hynix HMA81GR7AFR8N-VK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 49
读取速度，GB/s

12.8 8.8
写入速度，GB/s

9.0 8.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2143 2331

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology DDR4 2400 16GB

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Crucial Technology CT32G4DFD8266.C16FE 32GB

Kingston 99U5584-004.A00LF 4GB

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Kingston KHX2666C16S4/32G 32GB

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Crucial Technology CT51264AC800.C16FC 4GB

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