Crucial Technology CT51264BA1339.C16F 4GB vs Micron Technology 16ATF2G64AZ-2G6E1 16GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Micron Technology 16ATF2G64AZ-2G6E1 16GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 38

左右 29% 更低的延时

Micron Technology 16ATF2G64AZ-2G6E1 16GB

需要考虑的原因
Micron Technology 16ATF2G64AZ-2G6E1 16GB

报告一个错误

更快的读取速度，GB/s

15 13.9

测试中的平均数值
更快的写入速度，GB/s

12.5 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 38
读取速度，GB/s

13.9 15.0
写入速度，GB/s

8.4 12.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2251 3005

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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A-DATA Technology DDR4 3000 8GB

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A-DATA Technology AD73I1C1674EV 4GB

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Corsair CMU32GX4M2D3200C16 16GB

Corsair CMU32GX4M2D3200C16 16GB

Samsung M471B5273DH0-CK0 4GB

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SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Corsair CMG16GX4M2E3200C16 8GB

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Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

SK Hynix HMA81GU6CJR8N-VK 8GB

SK Hynix HMA81GU6CJR8N-VK 8GB

AMD R5316G1609U2K 8GB

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Avant Technology W6451U66J9266ND 4GB

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