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Samsung M471B5273DH0-CK0 4GB
SK Hynix HMT451S6BFR8A-PB 4GB

Samsung M471B5273DH0-CK0 4GB vs SK Hynix HMT451S6BFR8A-PB 4GB

总分
star star star star star
Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

总分
star star star star star
SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

差异 规格 评论

差异

Samsung M471B5273DH0-CK0 4GB 需要考虑的原因
Samsung M471B5273DH0-CK0 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    41 left arrow 44
    左右 7% 更低的延时
  • 更快的读取速度，GB/s
    13.3 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.0 left arrow 7.8
    测试中的平均数值
SK Hynix HMT451S6BFR8A-PB 4GB 需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB
报告一个错误

规格

完整的技术规格清单
Samsung M471B5273DH0-CK0 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    41 left arrow 44
  • 读取速度，GB/s
    13.3 left arrow 12.3
  • 写入速度，GB/s
    9.0 left arrow 7.8
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2016 left arrow 1977

Samsung M471B5273DH0-CK0 4GB RAM的比较

Corsair CMD8GX3M2A2933C12 4GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB

SK Hynix HMT451S6BFR8A-PB 4GB RAM的比较

Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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