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Micron Technology 8JSF25664HZ-1G4D1 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Micron Technology 8JSF25664HZ-1G4D1 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

总分
star star star star star
Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

总分
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

差异 规格 评论

差异

Micron Technology 8JSF25664HZ-1G4D1 2GB 需要考虑的原因
Micron Technology 8JSF25664HZ-1G4D1 2GB
报告一个错误
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB 需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 41
    左右 -128% 更低的延时
  • 更快的读取速度，GB/s
    20.4 left arrow 10.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.2 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Micron Technology 8JSF25664HZ-1G4D1 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 18
  • 读取速度，GB/s
    10.7 left arrow 20.4
  • 写入速度，GB/s
    7.5 left arrow 17.2
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1335 left arrow 3814

Micron Technology 8JSF25664HZ-1G4D1 2GB RAM的比较

Patriot Memory (PDP Systems) PSD34G160081S 4GB
SK Hynix HMA82GS7AFR8N-UH 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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