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Micron Technology 8JSF25664HZ-1G4D1 2GB
SK Hynix HMA82GS6MFR8N-TF 16GB

Micron Technology 8JSF25664HZ-1G4D1 2GB vs SK Hynix HMA82GS6MFR8N-TF 16GB

总分
star star star star star
Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

总分
star star star star star
SK Hynix HMA82GS6MFR8N-TF 16GB

SK Hynix HMA82GS6MFR8N-TF 16GB

差异 规格 评论

差异

Micron Technology 8JSF25664HZ-1G4D1 2GB 需要考虑的原因
Micron Technology 8JSF25664HZ-1G4D1 2GB
报告一个错误
SK Hynix HMA82GS6MFR8N-TF 16GB 需要考虑的原因
SK Hynix HMA82GS6MFR8N-TF 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 41
    左右 -5% 更低的延时
  • 更快的读取速度，GB/s
    13.3 left arrow 10.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.4 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Micron Technology 8JSF25664HZ-1G4D1 2GB
SK Hynix HMA82GS6MFR8N-TF 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 39
  • 读取速度，GB/s
    10.7 left arrow 13.3
  • 写入速度，GB/s
    7.5 left arrow 9.4
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1335 left arrow 2419

Micron Technology 8JSF25664HZ-1G4D1 2GB RAM的比较

Patriot Memory (PDP Systems) PSD34G160081S 4GB
SK Hynix HMA82GS7AFR8N-UH 16GB

SK Hynix HMA82GS6MFR8N-TF 16GB RAM的比较

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston 9905701-098.A00G 16GB
Kingston 9905701-098.A00G 16GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
SK Hynix HMA82GS6MFR8N-TF 16GB
SK Hynix HMA82GS6MFR8N-TF 16GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Kingston 9905744-067.A00G 32GB
Kingston 9905744-067.A00G 32GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMR16GX4M2Z3200C16 8GB
Corsair CMR16GX4M2Z3200C16 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Samsung V-GeN D4S8GL30A8TX5 8GB
Samsung V-GeN D4S8GL30A8TX5 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Wilk Elektronik S.A. GR3200S464L22/16G 16GB
Wilk Elektronik S.A. GR3200S464L22/16G 16GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
G Skill Intl F4-3600C19-8GVSB 8GB
G Skill Intl F4-3600C19-8GVSB 8GB
内存RAM
Corsair CM5S16GM4800A40K2 16GB
Corsair CM5S16GM4800A40K2 16GB
Kingston 9905701-143.A00G 16GB
Kingston 9905701-143.A00G 16GB
内存RAM
Samsung M471A1K43CB1-CTD 8GB
Samsung M471A1K43CB1-CTD 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-3200C14-16GTZ 16GB
G Skill Intl F4-3200C14-16GTZ 16GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Apacer Technology 78.CAGP7.C7Z0B 8GB
Apacer Technology 78.CAGP7.C7Z0B 8GB
内存RAM
A-DATA Technology DQVE1B16 2GB
A-DATA Technology DQVE1B16 2GB
Samsung M378T5663DZ3-CF7 2GB
Samsung M378T5663DZ3-CF7 2GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Crucial Technology CT16G4SFD8266.M16FH 16GB
Crucial Technology CT16G4SFD8266.M16FH 16GB
内存RAM