Mushkin 991679ES 996679ES 2GB vs G Skill Intl F4-3866C18-8GTZR 8GB

总分

Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

总分

G Skill Intl F4-3866C18-8GTZR 8GB

G Skill Intl F4-3866C18-8GTZR 8GB

差异规格评论

差异

Mushkin 991679ES 996679ES 2GB

需要考虑的原因
Mushkin 991679ES 996679ES 2GB

报告一个错误

G Skill Intl F4-3866C18-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-3866C18-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 63

左右 -133% 更低的延时
更快的读取速度，GB/s

18 7.7

测试中的平均数值
更快的写入速度，GB/s

14.5 5.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Mushkin 991679ES 996679ES 2GB

G Skill Intl F4-3866C18-8GTZR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 27
读取速度，GB/s

7.7 18.0
写入速度，GB/s

5.0 14.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1130 3531

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A2K43CB1-CRCR 16GB

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Samsung M378B5273CH0-CH9 4GB

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Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

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Crucial Technology BLT16G4D26BFT4.C16FD 16GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

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Corsair CMW16GX4M2Z4000C18 8GB

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Micron Technology 8R8F1G64HZ-2G3B1 8GB