Mushkin 991988 (996988) 4GB vs Teclast TLD416G26A30 16GB

总分

Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

总分

Teclast TLD416G26A30 16GB

Teclast TLD416G26A30 16GB

差异规格评论

差异

Mushkin 991988 (996988) 4GB

需要考虑的原因
Mushkin 991988 (996988) 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 36

左右 36% 更低的延时

Teclast TLD416G26A30 16GB

需要考虑的原因
Teclast TLD416G26A30 16GB

报告一个错误

更快的读取速度，GB/s

15.9 14

测试中的平均数值
更快的写入速度，GB/s

13.1 8.9

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Mushkin 991988 (996988) 4GB

Teclast TLD416G26A30 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 36
读取速度，GB/s

14.0 15.9
写入速度，GB/s

8.9 13.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2388 2719

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

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G Skill Intl F5-6400J3239G16G 16GB

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A-DATA Technology AO1P24HC4N2-BWCS 4GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Kingston XF875V-HYA 8GB

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G Skill Intl F3-1866C8-8GTX 8GB

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Kingmax Semiconductor GSJF62F-DA---------- 4GB

Kingmax Semiconductor GSJF62F-DA---------- 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

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Corsair CMU32GX4M2C3000C16 16GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Crucial Technology B|B8G4D30BET4K.C8FD 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Kingston 9905678-028.A00G 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Corsair CM4B8G2J2666A15D 8GB

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Samsung M471B5273DH0-CH9 4GB

Micron Technology 36ASF2G72LZ-2G1A1 16GB

Micron Technology 36ASF2G72LZ-2G1A1 16GB

Corsair CML32GX3M4A1866C10 8GB

Corsair CML32GX3M4A1866C10 8GB

Apacer Technology 78.D2GF2.AU30B 16GB

Apacer Technology 78.D2GF2.AU30B 16GB