Samsung M471B5273DH0-CH9 4GB vs Micron Technology 36ASF2G72LZ-2G1A1 16GB

总分

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分

Micron Technology 36ASF2G72LZ-2G1A1 16GB

Micron Technology 36ASF2G72LZ-2G1A1 16GB

差异规格评论

差异

Samsung M471B5273DH0-CH9 4GB

需要考虑的原因
Samsung M471B5273DH0-CH9 4GB

报告一个错误

Micron Technology 36ASF2G72LZ-2G1A1 16GB

需要考虑的原因
Micron Technology 36ASF2G72LZ-2G1A1 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 47

左右 -52% 更低的延时
更快的读取速度，GB/s

11.4 9.3

测试中的平均数值
更快的写入速度，GB/s

8.8 5.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CH9 4GB

Micron Technology 36ASF2G72LZ-2G1A1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 31
读取速度，GB/s

9.3 11.4
写入速度，GB/s

5.9 8.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1413 2371

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Micron Technology 36ASF2G72LZ-2G1A1 16GB

Micron Technology 36ASF2G72LZ-2G1A1 16GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

G Skill Intl F4-2933C16-8GFX 8GB

G Skill Intl F4-2933C16-8GFX 8GB

G Skill Intl F3-14900CL9-4GBSR 4GB

G Skill Intl F3-14900CL9-4GBSR 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Corsair CMK16GX4M1A2666C16 16GB

Corsair CMK16GX4M1A2666C16 16GB

SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

V-Color Technology Inc. TD8G16C16-UHK 8GB

V-Color Technology Inc. TD8G16C16-UHK 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

A-DATA Technology AO1P26KC8T1-BXPS 8GB

A-DATA Technology AO1P26KC8T1-BXPS 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

A-DATA Technology DDR4 4133 2OZ 8GB

A-DATA Technology DDR4 4133 2OZ 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Essencore Limited IM48GU48N24-FFFHM 8GB

Essencore Limited IM48GU48N24-FFFHM 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Mushkin 99[2/7/4]192[F/T] 4GB

Mushkin 99[2/7/4]192[F/T] 4GB

Kingston 9905403-515.A00LF 8GB

Kingston 9905403-515.A00LF 8GB

Kingston HP24D4U7S8MD-8 8GB

Kingston HP24D4U7S8MD-8 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB

Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB

Kingston ACR16D3LS1NGG/4G 4GB

Kingston ACR16D3LS1NGG/4G 4GB

Team Group Inc. TEAMGROUP-UD4-3600 8GB

Team Group Inc. TEAMGROUP-UD4-3600 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Micron Technology 72ASS4G72LZ-2G1A1 32GB

Micron Technology 72ASS4G72LZ-2G1A1 32GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB

Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB