Samsung M378A1G43DB0-CPB 8GB vs G Skill Intl F4-2933C16-8GFX 8GB

总分

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分

G Skill Intl F4-2933C16-8GFX 8GB

G Skill Intl F4-2933C16-8GFX 8GB

差异规格评论

差异

Samsung M378A1G43DB0-CPB 8GB

需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB

报告一个错误

G Skill Intl F4-2933C16-8GFX 8GB

需要考虑的原因
G Skill Intl F4-2933C16-8GFX 8GB

报告一个错误

更快的读取速度，GB/s

17.4 15

测试中的平均数值
更快的写入速度，GB/s

12.4 10.3

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13 更高的带宽

规格

完整的技术规格清单

Samsung M378A1G43DB0-CPB 8GB

G Skill Intl F4-2933C16-8GFX 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 36
读取速度，GB/s

15.0 17.4
写入速度，GB/s

10.3 12.4
内存带宽，mbps

17000 19200

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-19200, 1.2V, CAS Supported: 9 11 13 15 16
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2569 3552

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3466C16-8GVR 8GB

G Skill Intl F4-3466C16-8GVR 8GB

Samsung M471B1G73EB0-YK0 8GB

Samsung M471B1G73EB0-YK0 8GB

Crucial Technology CB8GS2666.C8ET 8GB

Crucial Technology CB8GS2666.C8ET 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Corsair CMV8GX4M1A2666C18 8GB

Corsair CMV8GX4M1A2666C18 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Samsung M378A2K43EB1-CWE 16GB

Samsung M378A2K43EB1-CWE 16GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Corsair CMW16GX4M2C3200C14 8GB

Corsair CMW16GX4M2C3200C14 8GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

G Skill Intl F4-3466C16-8GTZR 8GB

G Skill Intl F4-3466C16-8GTZR 8GB

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Patriot Memory (PDP Systems) 3600 C18 Series 32GB

Patriot Memory (PDP Systems) 3600 C18 Series 32GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLS8G4S26BFSD.16FBR2 8GB

Crucial Technology BLS8G4S26BFSD.16FBR2 8GB

Kingston 16ATF2G64AZ-2G1B1 8GB

Kingston 16ATF2G64AZ-2G1B1 8GB

Kingston 8ATF1G64AZ-2G3A1 8GB

Kingston 8ATF1G64AZ-2G3A1 8GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Corsair CMK128GX4M8B3200C16 16GB

Corsair CMK128GX4M8B3200C16 16GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

A-DATA Technology DDR4 3600 8GB

A-DATA Technology DDR4 3600 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

G Skill Intl F4-3200C16-8GTRS 8GB

G Skill Intl F4-3200C16-8GTRS 8GB