Mushkin 996902 2GB vs Crucial Technology CT16G4SFD8266 16GB

总分

Mushkin 996902 2GB

Mushkin 996902 2GB

总分

Crucial Technology CT16G4SFD8266 16GB

Crucial Technology CT16G4SFD8266 16GB

差异规格评论

差异

Mushkin 996902 2GB

需要考虑的原因
Mushkin 996902 2GB

报告一个错误

低于PassMark测试中的延时，ns

15 34

左右 56% 更低的延时
更快的读取速度，GB/s

20.6 12.7

测试中的平均数值
更快的写入速度，GB/s

14.0 8.9

测试中的平均数值

Crucial Technology CT16G4SFD8266 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8266 16GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Mushkin 996902 2GB

Crucial Technology CT16G4SFD8266 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

15 34
读取速度，GB/s

20.6 12.7
写入速度，GB/s

14.0 8.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2566 1718

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KF548C38-16 16GB

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Micron Technology 36ASF4G72PZ-2G3D1 32GB

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Avexir Technologies Corporation T 4GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Smart Modular SF464128CK8I6GKSEG 4GB

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Kingston 9905403-444.A00LF 4GB

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Crucial Technology CT8G4DFRA32A.C4FE 8GB

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SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

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Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Corsair CMW64GX4M8C3200C16 8GB

Corsair CMW64GX4M8C3200C16 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT8G4DFD8213.C16FBD1 8GB

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Corsair CMW8GX4M1D3000C16 8GB

Corsair CMW8GX4M1D3000C16 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Corsair CMK16GX4M2D3600C18 8GB

Corsair CMK16GX4M2D3600C18 8GB