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Nanya Technology M2F2G64CB88B7N-CG 2GB
Samsung M471A1K43CBCBCRC 8GB

Nanya Technology M2F2G64CB88B7N-CG 2GB vs Samsung M471A1K43CBCBCRC 8GB

总分
star star star star star
Nanya Technology M2F2G64CB88B7N-CG 2GB

Nanya Technology M2F2G64CB88B7N-CG 2GB

总分
star star star star star
Samsung M471A1K43CBCBCRC 8GB

Samsung M471A1K43CBCBCRC 8GB

差异 规格 评论

差异

Nanya Technology M2F2G64CB88B7N-CG 2GB 需要考虑的原因
Nanya Technology M2F2G64CB88B7N-CG 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 38
    左右 32% 更低的延时
  • 更快的读取速度，GB/s
    12.1 left arrow 9.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.2 left arrow 6.1
    测试中的平均数值
Samsung M471A1K43CBCBCRC 8GB 需要考虑的原因
Samsung M471A1K43CBCBCRC 8GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F2G64CB88B7N-CG 2GB
Samsung M471A1K43CBCBCRC 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 38
  • 读取速度，GB/s
    12.1 left arrow 9.3
  • 写入速度，GB/s
    7.2 left arrow 6.1
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1676 left arrow 1493

Nanya Technology M2F2G64CB88B7N-CG 2GB RAM的比较

SK Hynix HMT325U6CFR8C-H9 2GB
Kingston KHX2400C15D4/4G 4GB

Samsung M471A1K43CBCBCRC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2F2G64CB88B7N-CG 2GB
Nanya Technology M2F2G64CB88B7N-CG 2GB
Samsung M471A1K43CBCBCRC 8GB
Samsung M471A1K43CBCBCRC 8GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F4-4266C19-8GTRS 8GB
G Skill Intl F4-4266C19-8GTRS 8GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Chun Well Technology Holding Limited MD4U1636181DCW 16G
内存RAM
Kingston 99P5471-002.A00LF 2GB
Kingston 99P5471-002.A00LF 2GB
Nanya Technology M471A5143EB1-CRC 4GB
Nanya Technology M471A5143EB1-CRC 4GB
内存RAM
Nanya Technology M2S4G64CB8HB5N-CG 4GB
Nanya Technology M2S4G64CB8HB5N-CG 4GB
Kingston 99U5713-001.A00G 4GB
Kingston 99U5713-001.A00G 4GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
内存RAM
Nanya Technology M2S4G64CB8HB5N-CG 4GB
Nanya Technology M2S4G64CB8HB5N-CG 4GB
Corsair CM4X4GF2400Z16K4 4GB
Corsair CM4X4GF2400Z16K4 4GB
内存RAM
Nanya Technology M2S4G64CB8HB5N-CG 4GB
Nanya Technology M2S4G64CB8HB5N-CG 4GB
Corsair CMD32GX4M2A2800C16 16GB
Corsair CMD32GX4M2A2800C16 16GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Crucial Technology BLS8G4D30AESEK.M8FE 8GB
Crucial Technology BLS8G4D30AESEK.M8FE 8GB
内存RAM
Kingston 99U5471-052.A00LF 8GB
Kingston 99U5471-052.A00LF 8GB
Avant Technology W642GU44J2320NC 16GB
Avant Technology W642GU44J2320NC 16GB
内存RAM
Kingston SNY1600S11-4G-EDEG 4GB
Kingston SNY1600S11-4G-EDEG 4GB
Crucial Technology CB8GS2400.C8D 8GB
Crucial Technology CB8GS2400.C8D 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
ADVAN Inc AM42E28UD04T-NVL 4GB
ADVAN Inc AM42E28UD04T-NVL 4GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Kingston 9905598-025.A00G 8GB
Kingston 9905598-025.A00G 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M378A1K43CB2-CTD 8GB
Samsung M378A1K43CB2-CTD 8GB
内存RAM