Nanya Technology M2F4G64CB8HG5N-CG 4GB vs Micron Technology 18ASF1G72PZ-2G1B1 8GB

总分

Nanya Technology M2F4G64CB8HG5N-CG 4GB

Nanya Technology M2F4G64CB8HG5N-CG 4GB

总分

Micron Technology 18ASF1G72PZ-2G1B1 8GB

Micron Technology 18ASF1G72PZ-2G1B1 8GB

差异规格评论

差异

Nanya Technology M2F4G64CB8HG5N-CG 4GB

需要考虑的原因
Nanya Technology M2F4G64CB8HG5N-CG 4GB

报告一个错误

低于PassMark测试中的延时，ns

41 46

左右 11% 更低的延时
更快的读取速度，GB/s

13.3 11

测试中的平均数值

Micron Technology 18ASF1G72PZ-2G1B1 8GB

需要考虑的原因
Micron Technology 18ASF1G72PZ-2G1B1 8GB

报告一个错误

更快的写入速度，GB/s

9.1 8.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F4G64CB8HG5N-CG 4GB

Micron Technology 18ASF1G72PZ-2G1B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 46
读取速度，GB/s

13.3 11.0
写入速度，GB/s

8.2 9.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1982 2396

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5474-010.A00LF 2GB

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Eudar Technology Inc. 8GXMP3000CL16 8GB

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Micron Technology 16ATF2G64AZ-2G6D1 16GB

Micron Technology 16ATF2G64AZ-2G6D1 16GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

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Crucial Technology CT8G4DFS824A.M8FD 8GB

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Samsung M393B1G70BH0-CK0 8GB

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Corsair CMK16GX4M1A2400C14 16GB

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Kingston 16ATF2G64AZ-2G1B1 8GB

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SpecTek Incorporated ?????????????????? 2GB

Corsair CMD16GX4M4B3400C16 4GB

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Samsung M378A4G43AB2-CVF 32GB

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Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

PUSKILL PJ16TFK1GM8 16GB

PUSKILL PJ16TFK1GM8 16GB