RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
比较
Nanya Technology M2F4GH64CB8HB6N-CG 4GB vs Gloway International (HK) STK2400CL17SNB16GB 16GB
总分
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
总分
Gloway International (HK) STK2400CL17SNB16GB 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
报告一个错误
需要考虑的原因
Gloway International (HK) STK2400CL17SNB16GB 16GB
报告一个错误
低于PassMark测试中的延时,ns
23
26
左右 -13% 更低的延时
更快的读取速度,GB/s
17.5
12.3
测试中的平均数值
更快的写入速度,GB/s
13.2
7.1
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
23
读取速度,GB/s
12.3
17.5
写入速度,GB/s
7.1
13.2
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1952
3171
Nanya Technology M2F4GH64CB8HB6N-CG 4GB RAM的比较
SK Hynix HMT125U6DFR8C-H9 2GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Gloway International (HK) STK2400CL17SNB16GB 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B1G70BH0-CK0 8GB
Kingston 9905711-032.A00G 8GB
PNY Electronics PNY 2GB
Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB
Kingston KVR533D2N4 512MB
Essencore Limited IM48GU48A32-GIISMZ 8GB
AMD R5316G1609U2K 8GB
SK Hynix HMA41GR7MFR8N-TF 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Corsair CMD64GX4M4B2800C14 16GB
Samsung M393B1G70BH0-CK0 8GB
Mushkin MR[A/B]4U300JJJM16G 16GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston HP32D4S2S1ME-4 4GB
Kingston 99U5474-010.A00LF 2GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Gloway International Co. Ltd. TYA4U2666D19081C 8GB
Kingston 9965525-140.A00LF 8GB
Kingston ACR26D4U9S8MH-8 8GB
A-DATA Technology DQKD1A08 1GB
Corsair CMD64GX4M8B3200C16 8GB
Kingston 9905403-090.A01LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
Samsung M471B5273CH0-CH9 4GB
Crucial Technology BLS4G4D240FSA.M8FADG 4GB
报告一个错误
×
Bug description
Source link