Nanya Technology M2F4GH64CB8HB6N-CG 4GB vs Micron Technology 16G3200CL22 16GB

总分

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

总分

Micron Technology 16G3200CL22 16GB

Micron Technology 16G3200CL22 16GB

差异规格评论

差异

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

需要考虑的原因
Nanya Technology M2F4GH64CB8HB6N-CG 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 28

左右 7% 更低的延时

Micron Technology 16G3200CL22 16GB

需要考虑的原因
Micron Technology 16G3200CL22 16GB

报告一个错误

更快的读取速度，GB/s

14 12.3

测试中的平均数值
更快的写入速度，GB/s

7.3 7.1

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Micron Technology 16G3200CL22 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 28
读取速度，GB/s

12.3 14.0
写入速度，GB/s

7.1 7.3
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1952 2663

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264BD1339.M16F 4GB

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Transcend Information TS2GLH64V6B 16GB

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Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

AMD R744G2400U1S 4GB

AMD R744G2400U1S 4GB

Kingston 9965433-034.A00LF 4GB

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SK Hynix V-GeN D4H4GL30A8TX5 4GB

SK Hynix V-GeN D4H4GL30A8TX5 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Patriot Memory (PDP Systems) PSD34G16002 4GB

Kingston KHX3200C16D4/16GX 16GB

Kingston KHX3200C16D4/16GX 16GB