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Nanya Technology M2F8G64CB8HC5N-DI 8GB
Samsung V-GeN D4S8GL32A8TL 8GB

Nanya Technology M2F8G64CB8HC5N-DI 8GB vs Samsung V-GeN D4S8GL32A8TL 8GB

总分
star star star star star
Nanya Technology M2F8G64CB8HC5N-DI 8GB

Nanya Technology M2F8G64CB8HC5N-DI 8GB

总分
star star star star star
Samsung V-GeN D4S8GL32A8TL 8GB

Samsung V-GeN D4S8GL32A8TL 8GB

差异 规格 评论

差异

Nanya Technology M2F8G64CB8HC5N-DI 8GB 需要考虑的原因
Nanya Technology M2F8G64CB8HC5N-DI 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 64
    左右 39% 更低的延时
  • 更快的写入速度，GB/s
    9.9 left arrow 8.3
    测试中的平均数值
Samsung V-GeN D4S8GL32A8TL 8GB 需要考虑的原因
Samsung V-GeN D4S8GL32A8TL 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.8 left arrow 15.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F8G64CB8HC5N-DI 8GB
Samsung V-GeN D4S8GL32A8TL 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 64
  • 读取速度，GB/s
    15.4 left arrow 16.8
  • 写入速度，GB/s
    9.9 left arrow 8.3
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2614 left arrow 2052

Nanya Technology M2F8G64CB8HC5N-DI 8GB RAM的比较

G Skill Intl F4-2666C18-8GFX 8GB

Samsung V-GeN D4S8GL32A8TL 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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