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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Avant Technology J642GU42J7240N4 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Avant Technology J642GU42J7240N4 16GB

总分
star star star star star
Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分
star star star star star
Avant Technology J642GU42J7240N4 16GB

Avant Technology J642GU42J7240N4 16GB

差异 规格 评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB 需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB
报告一个错误
Avant Technology J642GU42J7240N4 16GB 需要考虑的原因
Avant Technology J642GU42J7240N4 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 37
    左右 -48% 更低的延时
  • 更快的读取速度，GB/s
    16.4 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Avant Technology J642GU42J7240N4 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 25
  • 读取速度，GB/s
    13.9 left arrow 16.4
  • 写入速度，GB/s
    8.6 left arrow 12.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2395 left arrow 2946

Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM的比较

SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB

Avant Technology J642GU42J7240N4 16GB RAM的比较

G Skill Intl F4-3600C16-8GTZKK 8GB
Peak Electronics 256X64M-67E 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Ramaxel Technology RMUA5090KB78HAF2133 8GB
Ramaxel Technology RMUA5090KB78HAF2133 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Samsung M391A1G43EB1-CPB 8GB
Samsung M391A1G43EB1-CPB 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLS8G4D26BFSEK.8FBR 8GB
Crucial Technology BLS8G4D26BFSEK.8FBR 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Virtium Technology Inc. VL33A1G63F-N6S 8GB
Virtium Technology Inc. VL33A1G63F-N6S 8GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
G Skill Intl F4-4000C19-16GTZKK 16GB
G Skill Intl F4-4000C19-16GTZKK 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Patriot Memory (PDP Systems) 2133 C14 Series 8GB
Patriot Memory (PDP Systems) 2133 C14 Series 8GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
G Skill Intl F4-3466C16-4GVK 4GB
G Skill Intl F4-3466C16-4GVK 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Teikon TMA41GU6AFR8N-TFSC 8GB
Teikon TMA41GU6AFR8N-TFSC 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
DSL Memory D4SS1G081SH24A-A 8GB
DSL Memory D4SS1G081SH24A-A 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
SK Hynix HMA851S6CJR6N-VK 4GB
SK Hynix HMA851S6CJR6N-VK 4GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M393A4K40BB1-CRC 32GB
Samsung M393A4K40BB1-CRC 32GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology CT16G4DFRA32A.C16FN 16GB
Crucial Technology CT16G4DFRA32A.C16FN 16GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Avant Technology W641GU48J7240ND 8GB
Avant Technology W641GU48J7240ND 8GB
内存RAM