Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Corsair CMV8GX4M1A2133C15 8GB

总分

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分

Corsair CMV8GX4M1A2133C15 8GB

Corsair CMV8GX4M1A2133C15 8GB

差异规格评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB

需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB

报告一个错误

Corsair CMV8GX4M1A2133C15 8GB

需要考虑的原因
Corsair CMV8GX4M1A2133C15 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 37

左右 -9% 更低的延时
更快的读取速度，GB/s

14.8 13.9

测试中的平均数值
更快的写入速度，GB/s

9.7 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Corsair CMV8GX4M1A2133C15 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 34
读取速度，GB/s

13.9 14.8
写入速度，GB/s

8.6 9.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2395 2583

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Kingston 9905700-026.A00G 8GB

Kingston 9905700-026.A00G 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Kllisre D4 8G 8GB

Kllisre D4 8G 8GB

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Samsung M386B4G70DM0-CMA4 32GB

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G Skill Intl F4-2400C17-4GFT 4GB