RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology CT16G4SFRA266.M16FRS 16GB
比较
Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Crucial Technology CT16G4SFRA266.M16FRS 16GB
总分
Nanya Technology M2F8G64CB8HC9N-DI 8GB
总分
Crucial Technology CT16G4SFRA266.M16FRS 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB
报告一个错误
低于PassMark测试中的延时,ns
37
38
左右 3% 更低的延时
需要考虑的原因
Crucial Technology CT16G4SFRA266.M16FRS 16GB
报告一个错误
更快的读取速度,GB/s
14.1
13.9
测试中的平均数值
更快的写入速度,GB/s
8.8
8.6
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology CT16G4SFRA266.M16FRS 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
37
38
读取速度,GB/s
13.9
14.1
写入速度,GB/s
8.6
8.8
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2395
2483
Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM的比较
SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB
Crucial Technology CT16G4SFRA266.M16FRS 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B1G70QH0-YK0 8GB
Micron Technology 8ATF1G64AZ-3G2J1 8GB
Kingston 99U5469-045.A00LF 4GB
Corsair CMH16GX4M2E3200C16 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Corsair CM4S16GL3200K18K2 16GB
Crucial Technology CT102464BF160B-16F 8GB
Transcend Information JM3200HLE-32GK 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMSO4GX3M1A1333C9 4GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2400C16-8GRS 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Essencore Limited IM4AGU88N24-FFFHMB 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3000C14-16GTZ 16GB
SK Hynix HMT351U6CFR8C-H9 4GB
V-Color Technology Inc. TD416G26D819-VC 16GB
Samsung M3 93T5750CZA-CE6 2GB
ISD Technology Limited KD48GU880-32A160X 8GB
Kingston KP4T2F-PSB 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston KF3000C16D4/32GX 32GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-2666C18-8GRS 8GB
报告一个错误
×
Bug description
Source link