Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Crucial Technology CT8G4SFRA32A.C16FG 8GB

总分

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分

Crucial Technology CT8G4SFRA32A.C16FG 8GB

Crucial Technology CT8G4SFRA32A.C16FG 8GB

差异规格评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB

需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 58

左右 36% 更低的延时

Crucial Technology CT8G4SFRA32A.C16FG 8GB

需要考虑的原因
Crucial Technology CT8G4SFRA32A.C16FG 8GB

报告一个错误

更快的读取速度，GB/s

15.7 13.9

测试中的平均数值
更快的写入速度，GB/s

9.9 8.6

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Crucial Technology CT8G4SFRA32A.C16FG 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 58
读取速度，GB/s

13.9 15.7
写入速度，GB/s

8.6 9.9
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2395 2096

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16JTF25664AZ-1G4F1 2GB

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Samsung M471A5644EB0-CPB 2GB

Samsung M471A5644EB0-CPB 2GB