Nanya Technology M2F8G64CB8HC9N-DI 8GB vs G Skill Intl F4-3200C16-8GRS 8GB

总分

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分

G Skill Intl F4-3200C16-8GRS 8GB

G Skill Intl F4-3200C16-8GRS 8GB

差异规格评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB

需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB

报告一个错误

G Skill Intl F4-3200C16-8GRS 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 37

左右 -9% 更低的延时
更快的读取速度，GB/s

17.4 13.9

测试中的平均数值
更快的写入速度，GB/s

14.3 8.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F8G64CB8HC9N-DI 8GB

G Skill Intl F4-3200C16-8GRS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 34
读取速度，GB/s

13.9 17.4
写入速度，GB/s

8.6 14.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2395 3138

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

G Skill Intl F4-3200C16-8GRS 8GB

G Skill Intl F4-3200C16-8GRS 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

G Skill Intl F4-2400C16-16GFXR 16GB

G Skill Intl F4-2400C16-16GFXR 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Crucial Technology CT8G4DFS832A.C8FE 8GB

Crucial Technology CT8G4DFS832A.C8FE 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Team Group Inc. TEAMGROUP-UD4-3600 8GB

Team Group Inc. TEAMGROUP-UD4-3600 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F4-2133C15-4GRR 4GB

G Skill Intl F4-2133C15-4GRR 4GB

A-DATA Technology DDR2 1066G 2GB

A-DATA Technology DDR2 1066G 2GB

Kllisre 8ATF1G64AZ-2G6H1 8GB

Kllisre 8ATF1G64AZ-2G6H1 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Crucial Technology CT16G4SFRA32A.C16FP 16GB

Crucial Technology CT16G4SFRA32A.C16FP 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology CT16G4DFD8266.C16FD1 16GB

Crucial Technology CT16G4DFD8266.C16FD1 16GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

Kingston KTC1G-UDIMM 1GB

Kingston KTC1G-UDIMM 1GB

Corsair CMK16GX4M4A2133C15 4GB

Corsair CMK16GX4M4A2133C15 4GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Corsair CMT64GX4M8C3200C16 8GB

Corsair CMT64GX4M8C3200C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N