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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston 9905665-023.A00G 4GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Kingston 9905665-023.A00G 4GB

总分
star star star star star
Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分
star star star star star
Kingston 9905665-023.A00G 4GB

Kingston 9905665-023.A00G 4GB

差异 规格 评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB 需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB
报告一个错误
  • 更快的写入速度，GB/s
    8.6 left arrow 7.7
    测试中的平均数值
Kingston 9905665-023.A00G 4GB 需要考虑的原因
Kingston 9905665-023.A00G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 37
    左右 -42% 更低的延时
  • 更快的读取速度，GB/s
    14.2 left arrow 13.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston 9905665-023.A00G 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 26
  • 读取速度，GB/s
    13.9 left arrow 14.2
  • 写入速度，GB/s
    8.6 left arrow 7.7
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2395 left arrow 1813

Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM的比较

SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB

Kingston 9905665-023.A00G 4GB RAM的比较

Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
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Kingston 9905665-023.A00G 4GB
Kingston 9905665-023.A00G 4GB
内存RAM
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内存RAM
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
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G Skill Intl F4-3600C16-8GTRGC 8GB
内存RAM
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内存RAM
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内存RAM
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Corsair CMR16GX4M2E4266C19 8GB
内存RAM