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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Micron Technology 18ASF1G72PZ-2G3B1 8GB

总分
star star star star star
Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分
star star star star star
Micron Technology 18ASF1G72PZ-2G3B1 8GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

差异 规格 评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB 需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 45
    左右 18% 更低的延时
  • 更快的读取速度，GB/s
    13.9 left arrow 11.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.6 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 1900
    左右 6.74% 更高的带宽
Micron Technology 18ASF1G72PZ-2G3B1 8GB 需要考虑的原因
Micron Technology 18ASF1G72PZ-2G3B1 8GB
报告一个错误

规格

完整的技术规格清单
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 45
  • 读取速度，GB/s
    13.9 left arrow 11.7
  • 写入速度，GB/s
    8.6 left arrow 8.4
  • 内存带宽，mbps
    12800 left arrow 1900
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-1900, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow no data
  • 排名PassMark (越多越好)
    2395 left arrow 2387

Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM的比较

SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB RAM的比较

Smart Modular SH564128FH8NZQNSCG 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
内存RAM
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内存RAM
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内存RAM
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Nanya Technology M2F8G64CB8HC9N-DI 8GB
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内存RAM
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内存RAM
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内存RAM
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G Skill Intl F4-3333C16-8GTZB 8GB
内存RAM
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SK Hynix HMT31GR7CFR4C-PB 8GB
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