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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Wilk Elektronik S.A. IR2400D464L15S/4G 4GB
比较
Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Wilk Elektronik S.A. IR2400D464L15S/4G 4GB
总分
Nanya Technology M2F8G64CB8HC9N-DI 8GB
总分
Wilk Elektronik S.A. IR2400D464L15S/4G 4GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB
报告一个错误
需要考虑的原因
Wilk Elektronik S.A. IR2400D464L15S/4G 4GB
报告一个错误
低于PassMark测试中的延时,ns
22
37
左右 -68% 更低的延时
更快的读取速度,GB/s
16.9
13.9
测试中的平均数值
更快的写入速度,GB/s
12.3
8.6
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Wilk Elektronik S.A. IR2400D464L15S/4G 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
37
22
读取速度,GB/s
13.9
16.9
写入速度,GB/s
8.6
12.3
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2395
2708
Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM的比较
SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB
Wilk Elektronik S.A. IR2400D464L15S/4G 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Wilk Elektronik S.A. IR2400D464L15S/4G 4GB
Kingston 9905403-444.A00LF 4GB
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Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 36ASF4G72PZ-2G6D1 32GB
Samsung M471B5674QH0-YK0 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB
Samsung M3 78T2863EHS-CF7 1GB
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Kingston 9965604-008.C00G 8GB
Kingston 9905584-016.A00LF 4GB
Crucial Technology BLS4G4D240FSB.8FAR 4GB
报告一个错误
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Bug description
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