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Nanya Technology M2N1G64TUH8D5F-AC 1GB
Corsair CMD128GX4M8B3200C16 16GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Corsair CMD128GX4M8B3200C16 16GB

总分
star star star star star
Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分
star star star star star
Corsair CMD128GX4M8B3200C16 16GB

Corsair CMD128GX4M8B3200C16 16GB

差异 规格 评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB 需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 12.2
    测试中的平均数值
Corsair CMD128GX4M8B3200C16 16GB 需要考虑的原因
Corsair CMD128GX4M8B3200C16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 92
    左右 -197% 更低的延时
  • 更快的写入速度，GB/s
    12.1 left arrow 1,266.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Corsair CMD128GX4M8B3200C16 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    92 left arrow 31
  • 读取速度，GB/s
    2,105.4 left arrow 12.2
  • 写入速度，GB/s
    1,266.1 left arrow 12.1
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    339 left arrow 2869

Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB

Corsair CMD128GX4M8B3200C16 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
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Corsair CMD128GX4M8B3200C16 16GB
内存RAM
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Samsung M4 70T5663CZ3-CE6 2GB
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内存RAM
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SK Hynix HMT351R7EFR8C-RD 4GB
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内存RAM
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内存RAM
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Samsung M393B1G70BH0-YK0 8GB
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Crucial Technology CB8GS2400.C8D 8GB
内存RAM
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Samsung M393B1K70CH0-CH9 8GB
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