Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Corsair CMR16GX4M2D3000C16 8GB

总分

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分

Corsair CMR16GX4M2D3000C16 8GB

Corsair CMR16GX4M2D3000C16 8GB

差异规格评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB

需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB

报告一个错误

更快的读取速度，GB/s

2 18.1

测试中的平均数值

Corsair CMR16GX4M2D3000C16 8GB

需要考虑的原因
Corsair CMR16GX4M2D3000C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 92

左右 -241% 更低的延时
更快的写入速度，GB/s

13.9 1,266.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Corsair CMR16GX4M2D3000C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

92 27
读取速度，GB/s

2,105.4 18.1
写入速度，GB/s

1,266.1 13.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

339 3365

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT25664AA800.M16FM 2GB

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Micron Technology 8ATF1G64AZ-2G3E1 8GB

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Samsung M3 78T2863EHS-CF7 1GB

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Kingston 9905678-043.A00G 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-3300C16-8GTZKW 8GB

G Skill Intl F4-3300C16-8GTZKW 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

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Kingston 9905734-061.A00G 32GB

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Kingston 99U5474-013.A00LF 2GB

Ramaxel Technology RMSA3310ME96HAF-3200 8GB

Ramaxel Technology RMSA3310ME96HAF-3200 8GB