Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Corsair CMR64GX4M4C3200C16 16GB

总分

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分

Corsair CMR64GX4M4C3200C16 16GB

Corsair CMR64GX4M4C3200C16 16GB

差异规格评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB

需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB

报告一个错误

更快的读取速度，GB/s

2 15.1

测试中的平均数值

Corsair CMR64GX4M4C3200C16 16GB

需要考虑的原因
Corsair CMR64GX4M4C3200C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 92

左右 -163% 更低的延时
更快的写入速度，GB/s

14.9 1,266.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Corsair CMR64GX4M4C3200C16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

92 35
读取速度，GB/s

2,105.4 15.1
写入速度，GB/s

1,266.1 14.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

339 3245

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung 1600 CL10 Series 8GB

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Kingston 9905471-006.A01LF 4GB

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Corsair CMW16GX4M2K4266C19 8GB

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Kingston 2GB-DDR2 800Mhz 2GB

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Crucial Technology BLS8G4D240FSE.16FBR2 8GB

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Kingston 99U5584-005.A00LF 4GB

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Kingston XJ69DF-MIE2 8GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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Kingston 9965433-034.A00LF 4GB

G Skill Intl F4-3600C16-8GTZN 8GB

G Skill Intl F4-3600C16-8GTZN 8GB