RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology BL16G30C15U4B.16FE 16GB
比较
Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Crucial Technology BL16G30C15U4B.16FE 16GB
总分
Nanya Technology M2N1G64TUH8D5F-AC 1GB
总分
Crucial Technology BL16G30C15U4B.16FE 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
需要考虑的原因
Crucial Technology BL16G30C15U4B.16FE 16GB
报告一个错误
低于PassMark测试中的延时,ns
33
92
左右 -179% 更低的延时
更快的读取速度,GB/s
20
2
测试中的平均数值
更快的写入速度,GB/s
14.7
1,266.1
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology BL16G30C15U4B.16FE 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
92
33
读取速度,GB/s
2,105.4
20.0
写入速度,GB/s
1,266.1
14.7
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
339
3462
Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB
Crucial Technology BL16G30C15U4B.16FE 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology BL16G30C15U4B.16FE 16GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Gloway International (HK) STK4U2400D15082C 8GB
PNY Electronics 4GBH2X02E99927-16 4GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
G Skill Intl F5-6400J3239G16G 16GB
Apacer Technology 78.BAGNF.40C0B 4GB
Corsair CMX4GX3M2A1600C9 2GB
G Skill Intl F4-4000C18-8GTZ 8GB
Samsung M471A2K43DB1-CTD 16GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
Corsair CMY16GX3M4A2133C8 4GB
SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
A-DATA Technology DDR4 3200 8GB
AMD R5316G1609U2K 8GB
Corsair CM4X16GC3200C16K2 16GB
Samsung M393B1K70QB0-CK0 8GB
Kingston 8ATF1G64AZ-2G3A1 8GB
SK Hynix DDR2 800 2G 2GB
SK Hynix HMA81GU6CJR8N-XN 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Crucial Technology BL8G32C16U4R.M8FE1 8GB
Samsung M471B5173DB0-YK0 4GB
Chun Well Technology Holding Limited CL19-19-19 D4-2666
G Skill Intl F3-2800C12-8GTXDG 8GB
Kingston XWM8G1-MIE 32GB
报告一个错误
×
Bug description
Source link