Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Crucial Technology BLT16G4D30AETA.K16FB 16GB

总分

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

差异规格评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB

需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB

报告一个错误

更快的读取速度，GB/s

2 17.9

测试中的平均数值

Crucial Technology BLT16G4D30AETA.K16FB 16GB

需要考虑的原因
Crucial Technology BLT16G4D30AETA.K16FB 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 92

左右 -254% 更低的延时
更快的写入速度，GB/s

14.7 1,266.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

92 26
读取速度，GB/s

2,105.4 17.9
写入速度，GB/s

1,266.1 14.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

339 3705

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9965669-027.A00G 16GB

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Kingston 9905403-444.A00LF 4GB

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Samsung M393B1K70QB0-CK0 8GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

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Crucial Technology BLT16G4D30AETA.K16FB 16GB

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Kingston 2GB-DDR2 800Mhz 2GB

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Corsair CM4X8GE2666C16K8 8GB

SpecTek Incorporated ?????????????????? 2GB

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Corsair CMK16GX4M2E4333C19 8GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

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Kingston 9905625-076.A00G 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 16GB 2133MHz DIMM 16GB

Micron Technology 16GB 2133MHz DIMM 16GB

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GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB