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Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905711-035.A00G 8GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs Kingston 9905711-035.A00G 8GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
Kingston 9905711-035.A00G 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
16.1
测试中的平均数值
更快的写入速度,GB/s
2,622.0
11.8
测试中的平均数值
需要考虑的原因
Kingston 9905711-035.A00G 8GB
报告一个错误
低于PassMark测试中的延时,ns
45
77
左右 -71% 更低的延时
更高的内存带宽,mbps
25600
5300
左右 4.83 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905711-035.A00G 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
45
读取速度,GB/s
3,405.2
16.1
写入速度,GB/s
2,622.0
11.8
内存带宽,mbps
5300
25600
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度
5-5-5-15 / 667 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
763
2723
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Kingston 9905711-035.A00G 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT51264BF160B.M16F 4GB
Kingston 9905599-010.A00G 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905678-041.A00G 4GB
Kingston 9905403-447.A00LF 4GB
Crucial Technology BLS8G4D240FSB.16FBD? 8GB
Protocol Engines Kingrock 800 2GB 2GB
G Skill Intl F4-2400C16-8GRSB 8GB
Kingston 9905403-444.A00LF 4GB
V-Color Technology Inc. TN416G24D817-VHA/R 16GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
Corsair CMZ16GX3M2A2400C10 8GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
Kingston ACR16D3LS1NGG/4G 4GB
Crucial Technology CB8GS2400.C8ET 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-3333C16-8GTZSK 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU7AFR8C
Crucial Technology BLT4G4D30AETA.K8FD 4GB
Essencore Limited IM48GU88N26-GIIHA0 8GB
Smart Modular SF4722G4CKHH6DFSDS 16GB
Kingston KHX3200C18D4/8G 8GB
G Skill Intl F4-2800C15-4GVR 4GB
Samsung M393B2G70BH0-CK0 16GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
报告一个错误
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Bug description
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