Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Crucial Technology CT16G4SFD8213.C16FDD 16GB

总分

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分

Crucial Technology CT16G4SFD8213.C16FDD 16GB

Crucial Technology CT16G4SFD8213.C16FDD 16GB

差异规格评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB

需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB

报告一个错误

更快的读取速度，GB/s

2 15.1

测试中的平均数值

Crucial Technology CT16G4SFD8213.C16FDD 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8213.C16FDD 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 92

左右 -207% 更低的延时
更快的写入速度，GB/s

9.9 1,266.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Crucial Technology CT16G4SFD8213.C16FDD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

92 30
读取速度，GB/s

2,105.4 15.1
写入速度，GB/s

1,266.1 9.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

339 2732

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C16-16GTRS 16GB

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Mushkin 991586 2GB

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Corsair CMRX8GD3000C16R4D 8GB

Corsair CMRX8GD3000C16R4D 8GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Samsung M391A2K43BB1-CPB 16GB

Samsung M391A2K43BB1-CPB 16GB