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Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
比较
Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Crucial Technology CT4G4SFS8213.C8FBD2 4GB
总分
Nanya Technology M2N1G64TUH8D5F-AC 1GB
总分
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
更快的读取速度,GB/s
2
12.9
测试中的平均数值
需要考虑的原因
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
92
左右 -283% 更低的延时
更快的写入速度,GB/s
6.0
1,266.1
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
92
24
读取速度,GB/s
2,105.4
12.9
写入速度,GB/s
1,266.1
6.0
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
339
1633
Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMX8GX3M2A1600C11 4GB
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
Kingston 99P5474-014.A00LF 4GB
INTENSO M418039 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
Kingston 9965525-144.A00LF 8GB
Crucial Technology CT4G4SFS824A.C8FBD2 4GB
Samsung M393B1G70BH0-CK0 8GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
A-DATA Technology VDQVE1B16 2GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
AMD R5316G1609U2K 8GB
Crucial Technology BL8G30C15U4W.8FE 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
INTENSO 5641162 8GB
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology BLT8G4D26BFT4K.C8FD 8GB
A-DATA Technology DDR3 1333G 2GB
G Skill Intl F4-3200C14-8GTZSW 8GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology CT8G4SFRA32A.C4FE 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB
A-DATA Technology DDR3 1333G 2GB
Micron Technology CT4G4DFS8213.8FA11 4GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMK8GX4M2B4266C19 4GB
报告一个错误
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Bug description
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