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Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-2400C15-8GNT 8GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs G Skill Intl F4-2400C15-8GNT 8GB

总分
star star star star star
Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分
star star star star star
G Skill Intl F4-2400C15-8GNT 8GB

G Skill Intl F4-2400C15-8GNT 8GB

差异 规格 评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB 需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 16.5
    测试中的平均数值
G Skill Intl F4-2400C15-8GNT 8GB 需要考虑的原因
G Skill Intl F4-2400C15-8GNT 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 92
    左右 -188% 更低的延时
  • 更快的写入速度，GB/s
    11.6 left arrow 1,266.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-2400C15-8GNT 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    92 left arrow 32
  • 读取速度，GB/s
    2,105.4 left arrow 16.5
  • 写入速度，GB/s
    1,266.1 left arrow 11.6
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    339 left arrow 2920

Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB

G Skill Intl F4-2400C15-8GNT 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-2133C15-16GFX 16GB
G Skill Intl F4-2133C15-16GFX 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Super Talent F24UB16GV 16GB
Super Talent F24UB16GV 16GB
内存RAM
Kingston 9965433-406.A00LF 8GB
Kingston 9965433-406.A00LF 8GB
Avant Technology J644GU44J1293NF 32GB
Avant Technology J644GU44J1293NF 32GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Crucial Technology CT8G4DFS824A.M8FE 8GB
Crucial Technology CT8G4DFS824A.M8FE 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G16002 8GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
Samsung M471A5244CB0-CTD 4GB
Samsung M471A5244CB0-CTD 4GB
内存RAM
Kingston KHX1866C9D3/8GX 8GB
Kingston KHX1866C9D3/8GX 8GB
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB
Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-3200C16-16GTZSK 16GB
G Skill Intl F4-3200C16-16GTZSK 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Mushkin MRA4S293MMMF32G 32GB
Mushkin MRA4S293MMMF32G 32GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Heoriady M378A1K43BB2-CTD 8GB
Heoriady M378A1K43BB2-CTD 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology BLS8G4D26BFSE.16FD2 8GB
Crucial Technology BLS8G4D26BFSE.16FD2 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-4133C19-4GTZ 4GB
G Skill Intl F4-4133C19-4GTZ 4GB
内存RAM