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Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-3200C15-8GVR 8GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs G Skill Intl F4-3200C15-8GVR 8GB

总分
star star star star star
Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分
star star star star star
G Skill Intl F4-3200C15-8GVR 8GB

G Skill Intl F4-3200C15-8GVR 8GB

差异 规格 评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB 需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 16.9
    测试中的平均数值
G Skill Intl F4-3200C15-8GVR 8GB 需要考虑的原因
G Skill Intl F4-3200C15-8GVR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 92
    左右 -217% 更低的延时
  • 更快的写入速度，GB/s
    12.5 left arrow 1,266.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-3200C15-8GVR 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    92 left arrow 29
  • 读取速度，GB/s
    2,105.4 left arrow 16.9
  • 写入速度，GB/s
    1,266.1 left arrow 12.5
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    339 left arrow 3191

Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB

G Skill Intl F4-3200C15-8GVR 8GB RAM的比较

Patriot Memory (PDP Systems) PSD34G16002 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 9965433-034.A00LF 4GB
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内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
G Skill Intl F4-3600C16-16GTRGC 16GB
G Skill Intl F4-3600C16-16GTRGC 16GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-3200C15-8GVR 8GB
G Skill Intl F4-3200C15-8GVR 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
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Essencore Limited KD4AGS88A-26N1600 16GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
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G Skill Intl F4-3000C14-16GVKD 16GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
SK Hynix HMAA4GU6MJR8N-VK 32GB
SK Hynix HMAA4GU6MJR8N-VK 32GB
内存RAM
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMX4GX3M1A1333C9 4GB
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Kingston 9905701-006.A00G 16GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Kingston 9965589-030.D01G 8GB
Kingston 9965589-030.D01G 8GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
V-GEN D4H4GL30A8TS5 4GB
V-GEN D4H4GL30A8TS5 4GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Samsung M471A5244BB0-CRC 4GB
Samsung M471A5244BB0-CRC 4GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
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Corsair CMR64GX4M8X3800C19 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU7AFR8C-RD 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU7AFR8C
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
内存RAM