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Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-3200C16-4GTZ 4GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs G Skill Intl F4-3200C16-4GTZ 4GB

总分
star star star star star
Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分
star star star star star
G Skill Intl F4-3200C16-4GTZ 4GB

G Skill Intl F4-3200C16-4GTZ 4GB

差异 规格 评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB 需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 18
    测试中的平均数值
G Skill Intl F4-3200C16-4GTZ 4GB 需要考虑的原因
G Skill Intl F4-3200C16-4GTZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 92
    左右 -338% 更低的延时
  • 更快的写入速度，GB/s
    13.8 left arrow 1,266.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-3200C16-4GTZ 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    92 left arrow 21
  • 读取速度，GB/s
    2,105.4 left arrow 18.0
  • 写入速度，GB/s
    1,266.1 left arrow 13.8
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    339 left arrow 3034

Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB

G Skill Intl F4-3200C16-4GTZ 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
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G Skill Intl F4-3200C16-4GTZ 4GB
内存RAM
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内存RAM
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Kingston 9905403-090.A01LF 4GB
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内存RAM
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内存RAM
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
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内存RAM
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G Skill Intl F4-3000C15-4GRR 4GB
内存RAM
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SK Hynix HYMP164U64CP6-Y5 512MB
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G Skill Intl F4-3333C16-16GTZKW 16GB
内存RAM
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Kingston 99U5403-492.A00LF 8GB
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内存RAM