Nanya Technology M2N1G64TUH8D5F-AC 1GB vs G Skill Intl F4-4400C16-8GTZR 8GB

总分

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分

G Skill Intl F4-4400C16-8GTZR 8GB

G Skill Intl F4-4400C16-8GTZR 8GB

差异规格评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB

需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB

报告一个错误

G Skill Intl F4-4400C16-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-4400C16-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 92

左右 -241% 更低的延时
更快的读取速度，GB/s

21.9 2

测试中的平均数值
更快的写入速度，GB/s

19.1 1,266.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2N1G64TUH8D5F-AC 1GB

G Skill Intl F4-4400C16-8GTZR 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

92 27
读取速度，GB/s

2,105.4 21.9
写入速度，GB/s

1,266.1 19.1
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

339 4044

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT51264BD1339.M16F 4GB

Teikon TMA81GS6AFR8N-UHSC 8GB

Teikon TMA81GS6AFR8N-UHSC 8GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Apacer Technology GD2.1527CS.001 8GB

Apacer Technology GD2.1527CS.001 8GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

G Skill Intl F4-4400C16-8GTZR 8GB

G Skill Intl F4-4400C16-8GTZR 8GB

SpecTek Incorporated ?????????????????? 2GB

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A-DATA Technology AO1P24HC4R1-BSIS 4GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

G Skill Intl F4-3200C16-16GTRG 16GB

G Skill Intl F4-3200C16-16GTRG 16GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Crucial Technology CT4G4DFS8213.C8FAR11 4GB

Crucial Technology CT4G4DFS8213.C8FAR11 4GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Kingston KF3200C16D4/16GX 16GB

Kingston KF3200C16D4/16GX 16GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Kingston 9905678-033.A00G 4GB

Kingston 9905678-033.A00G 4GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Corsair CM4X4GF2400C14K4 4GB

Corsair CM4X4GF2400C14K4 4GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Patriot Memory (PDP Systems) 3000 C15 Series 8GB

Patriot Memory (PDP Systems) 3000 C15 Series 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Heoriady HX2666DT8G-TD 8GB

Heoriady HX2666DT8G-TD 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Kingmax Semiconductor GSAF62F-D8---------- 4GB

Kingmax Semiconductor GSAF62F-D8---------- 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Patriot Memory (PDP Systems) PSD44G213382 4GB

Patriot Memory (PDP Systems) PSD44G213382 4GB