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Nanya Technology M2N1G64TUH8D5F-AC 1GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
比较
Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Patriot Memory (PDP Systems) 3200 C16 Series 8GB
总分
Nanya Technology M2N1G64TUH8D5F-AC 1GB
总分
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
更快的读取速度,GB/s
2
18
测试中的平均数值
需要考虑的原因
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
报告一个错误
低于PassMark测试中的延时,ns
30
92
左右 -207% 更低的延时
更快的写入速度,GB/s
14.3
1,266.1
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
92
30
读取速度,GB/s
2,105.4
18.0
写入速度,GB/s
1,266.1
14.3
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
339
3466
Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB RAM的比较
Corsair CMSX32GX4M2A3200C22 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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SK Hynix HMT351R7EFR8C-RD 4GB
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Samsung M3 78T5663RZ3-CE6 2GB
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Crucial Technology CT8G4SFRA266.M8FJ 8GB
报告一个错误
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Bug description
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