Nanya Technology M2X4G64CB8HG5N-DG 4GB vs Crucial Technology BLS8G4S240FSD.M16FAD 8GB

总分

Nanya Technology M2X4G64CB8HG5N-DG 4GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB

总分

Crucial Technology BLS8G4S240FSD.M16FAD 8GB

Crucial Technology BLS8G4S240FSD.M16FAD 8GB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG5N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG5N-DG 4GB

报告一个错误

Crucial Technology BLS8G4S240FSD.M16FAD 8GB

需要考虑的原因
Crucial Technology BLS8G4S240FSD.M16FAD 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 39

左右 -50% 更低的延时
更快的读取速度，GB/s

15.1 13.7

测试中的平均数值
更快的写入速度，GB/s

11.6 9.7

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG5N-DG 4GB

Crucial Technology BLS8G4S240FSD.M16FAD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 26
读取速度，GB/s

13.7 15.1
写入速度，GB/s

9.7 11.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2431 2579

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Terabyte Co Ltd RCX2-16G3600A 8GB

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Samsung M471B1G73DB0-YK0 8GB

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G Skill Intl F4-4133C19-8GTZRF 8GB

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AMD AE34G1601U1 4GB

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A-DATA Technology AO1P32MCST2-BZPS 16GB

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AMD AE34G2139U2 4GB

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UMAX Technology D4-2133-4GB-512X8-L 4GB

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Kingston 99U5584-004.A00LF 4GB

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SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

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Ramaxel Technology RMT3010EC58E8F1333 2GB

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Transcend Information JM2666HSB-16G 16GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Crucial Technology CT16G4DFD8213.16FDD1 16GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Kingston KF2666C16S4/16G 16GB

Kingston KF2666C16S4/16G 16GB

Samsung M393B2G70BH0-YK0 16GB

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Essencore Limited IM48GU88N24-FFFHA0 8GB

Essencore Limited IM48GU88N24-FFFHA0 8GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB

Crucial Technology BLS8G4S240FSD.M16FAD 8GB

Crucial Technology BLS8G4S240FSD.M16FAD 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Golden Empire CL14-16-16 D4-2400 16GB

Golden Empire CL14-16-16 D4-2400 16GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Kingston KHX2666C16D4/32GX 32GB

Kingston KHX2666C16D4/32GX 32GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C

Crucial Technology BLE4G4D32AEEA.K8FD 4GB

Crucial Technology BLE4G4D32AEEA.K8FD 4GB