Nanya Technology M2X4G64CB8HG5N-DG 4GB vs Kingston 99U5700-032.A00G 16GB

总分

Nanya Technology M2X4G64CB8HG5N-DG 4GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB

总分

Kingston 99U5700-032.A00G 16GB

Kingston 99U5700-032.A00G 16GB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG5N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG5N-DG 4GB

报告一个错误

Kingston 99U5700-032.A00G 16GB

需要考虑的原因
Kingston 99U5700-032.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 39

左右 -22% 更低的延时
更快的读取速度，GB/s

14.1 13.7

测试中的平均数值
更快的写入速度，GB/s

10.6 9.7

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG5N-DG 4GB

Kingston 99U5700-032.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 32
读取速度，GB/s

13.7 14.1
写入速度，GB/s

9.7 10.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2431 2769

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PNY Electronics PNY 2GB

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G Skill Intl F4-2400C15-8GVS 8GB

Samsung M378A1G43DB0-CPB 8GB

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Crucial Technology BLS4G4D26BFSC.8FE 4GB

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