Nanya Technology M2X4G64CB8HG9N-DG 4GB vs AMD R7S44G2606U1S 4GB

总分

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分

AMD R7S44G2606U1S 4GB

AMD R7S44G2606U1S 4GB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB

报告一个错误

AMD R7S44G2606U1S 4GB

需要考虑的原因
AMD R7S44G2606U1S 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 36

左右 -80% 更低的延时
更快的读取速度，GB/s

18.9 14.9

测试中的平均数值
更快的写入速度，GB/s

14.3 9.5

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG9N-DG 4GB

AMD R7S44G2606U1S 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 20
读取速度，GB/s

14.9 18.9
写入速度，GB/s

9.5 14.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2292 2707

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Team Group Inc. DDR4 3000 4GB

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A-DATA Technology DQVE1908 512MB

Crucial Technology CT16G4DFD832A.M16FR 16GB

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Samsung M471B5673FH0-CF8 2GB

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Mushkin MRA4S320GJJM32G 32GB

Mushkin MRA4S320GJJM32G 32GB

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Corsair CMK32GX4M4B4000C19 8GB

Corsair CMK32GX4M4B4000C19 8GB