Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Corsair CMSX4GX4M1A2400C16 4GB

总分

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分

Corsair CMSX4GX4M1A2400C16 4GB

Corsair CMSX4GX4M1A2400C16 4GB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 139

左右 74% 更低的延时
更快的读取速度，GB/s

14.9 14.4

测试中的平均数值
更快的写入速度，GB/s

9.5 6.9

测试中的平均数值

Corsair CMSX4GX4M1A2400C16 4GB

需要考虑的原因
Corsair CMSX4GX4M1A2400C16 4GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Corsair CMSX4GX4M1A2400C16 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 139
读取速度，GB/s

14.9 14.4
写入速度，GB/s

9.5 6.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2292 1152

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Kingston 99U5469-045.A00LF 4GB

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G Skill Intl F4-3000C15-4GTZ 4GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-3600C19-16GSXF 16GB

G Skill Intl F4-3600C19-16GSXF 16GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Kingston K9CXF2-MIE 8GB

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G Skill Intl F4-3600C19-8GSXW 8GB