Nanya Technology M2X4G64CB8HG9N-DG 4GB vs G Skill Intl F4-2133C15-8GRK 8GB

总分

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分

G Skill Intl F4-2133C15-8GRK 8GB

G Skill Intl F4-2133C15-8GRK 8GB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 41

左右 12% 更低的延时
更快的读取速度，GB/s

14.9 12.7

测试中的平均数值

G Skill Intl F4-2133C15-8GRK 8GB

需要考虑的原因
G Skill Intl F4-2133C15-8GRK 8GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG9N-DG 4GB

G Skill Intl F4-2133C15-8GRK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 41
读取速度，GB/s

14.9 12.7
写入速度，GB/s

9.5 9.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2292 2501

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

G Skill Intl F4-2133C15-8GRK 8GB

G Skill Intl F4-2133C15-8GRK 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Apacer Technology GD2.1129WH.001 16GB

Apacer Technology GD2.1129WH.001 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

G Skill Intl F4-3600C16-8GTRG 8GB

G Skill Intl F4-3600C16-8GTRG 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Corsair CMR128GX4M8Z2933C16 16GB

Corsair CMR128GX4M8Z2933C16 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Corsair CMW64GX4M2E3200C16 32GB

Corsair CMW64GX4M2E3200C16 32GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

G Skill Intl F4-3333C16-8GTZKW 8GB

G Skill Intl F4-3333C16-8GTZKW 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Samsung M378A2K43CB1-CRC 16GB

Samsung M378A2K43CB1-CRC 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Corsair CMD32GX4M2C3466C16W 16GB

Corsair CMD32GX4M2C3466C16W 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Samsung M378A4G43MB1-CTD 32GB

Samsung M378A4G43MB1-CTD 32GB

Corsair CML8GX3M2A1866C9 4GB

Corsair CML8GX3M2A1866C9 4GB

Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB

Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Samsung M378A1G43EB1-CRC 8GB

Samsung M378A1G43EB1-CRC 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Kingston K821PJ-MIB 16GB

Kingston K821PJ-MIB 16GB

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

Gold Key Technology Co Ltd NMGD480E82-3200D 8GB

Gold Key Technology Co Ltd NMGD480E82-3200D 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Corsair CMK64GX4M2A2666C16 32GB

Corsair CMK64GX4M2A2666C16 32GB