Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Samsung M378A4G43AB2-CWE 32GB

总分

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分

Samsung M378A4G43AB2-CWE 32GB

Samsung M378A4G43AB2-CWE 32GB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 37

左右 3% 更低的延时

Samsung M378A4G43AB2-CWE 32GB

需要考虑的原因
Samsung M378A4G43AB2-CWE 32GB

报告一个错误

更快的读取速度，GB/s

16.9 14.9

测试中的平均数值
更快的写入速度，GB/s

14.4 9.5

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Samsung M378A4G43AB2-CWE 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 37
读取速度，GB/s

14.9 16.9
写入速度，GB/s

9.5 14.4
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2292 3419

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Samsung M3 78T2863EHS-CF7 1GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

Corsair CMK64GX4M8A2666C16 8GB

Corsair CMK64GX4M8A2666C16 8GB