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Nanya Technology M2X4G64CB8HG9N-DG 4GB
Samsung M386A8K40CM2-CRC 64GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Samsung M386A8K40CM2-CRC 64GB

总分
star star star star star
Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分
star star star star star
Samsung M386A8K40CM2-CRC 64GB

Samsung M386A8K40CM2-CRC 64GB

差异 规格 评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB 需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 41
    左右 12% 更低的延时
  • 更快的读取速度，GB/s
    14.9 left arrow 8.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.5 left arrow 5.4
    测试中的平均数值
Samsung M386A8K40CM2-CRC 64GB 需要考虑的原因
Samsung M386A8K40CM2-CRC 64GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Samsung M386A8K40CM2-CRC 64GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 41
  • 读取速度，GB/s
    14.9 left arrow 8.2
  • 写入速度，GB/s
    9.5 left arrow 5.4
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2292 left arrow 1704

Nanya Technology M2X4G64CB8HG9N-DG 4GB RAM的比较

Kingston 9905402-592.A00LF 4GB
SK Hynix Kingston 4GB

Samsung M386A8K40CM2-CRC 64GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Samsung M386A8K40CM2-CRC 64GB
Samsung M386A8K40CM2-CRC 64GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
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内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
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Micron Technology 16ATF2G64HZ-2G6E1 16GB
内存RAM
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Samsung M393B1K70CH0-CH9 8GB
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G Skill Intl F4-2133C15-8GRK 8GB
内存RAM
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Samsung M471B5273CH0-CH9 4GB
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Corsair CM3X1G1333C9 1GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Golden Empire CL15-15-15 D4-2666 4GB
Golden Empire CL15-15-15 D4-2666 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD64GX4M8B2800C14 8GB
Corsair CMD64GX4M8B2800C14 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
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Golden Empire CL16-18-18 D4-3400 4GB
内存RAM
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Unifosa Corporation HU564404EP0200 4GB
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Mushkin MR[A/B]4U266GHHF16G 16GB
内存RAM
SK Hynix HMAA1GS6CJR6N-XN 8GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
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Gold Key Technology Co Ltd NMSO480E82-3200E 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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Avant Technology J641GU42J5213ND 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
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Samsung M378A4G43MB1-CTD 32GB
内存RAM