Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Samsung M471A2K43BB1-CRC 16GB

总分

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分

Samsung M471A2K43BB1-CRC 16GB

Samsung M471A2K43BB1-CRC 16GB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 38

左右 5% 更低的延时
更快的读取速度，GB/s

14.9 14.2

测试中的平均数值

Samsung M471A2K43BB1-CRC 16GB

需要考虑的原因
Samsung M471A2K43BB1-CRC 16GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Samsung M471A2K43BB1-CRC 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 38
读取速度，GB/s

14.9 14.2
写入速度，GB/s

9.5 9.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2292 2470

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KP4T2F-PSB 4GB

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Kingston ACR16D3LS1KNG/8G 8GB

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Kingston KHX2400C11D3/4GX 4GB

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Kingston HP32D4U8S8HD-8X 8GB

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Chun Well Technology Holding Limited MD4U1636181DCW 16GB

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Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Wilk Elektronik S.A. GY2133D464L15S/4G 4GB

Wilk Elektronik S.A. GY2133D464L15S/4G 4GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CM4X8GF2666C16K4 8GB

Corsair CM4X8GF2666C16K4 8GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Corsair CMK32GX4M1A2400C16 32GB

Corsair CMK32GX4M1A2400C16 32GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology CT8G4DFD8213.C16FBD2 8GB

Crucial Technology CT8G4DFD8213.C16FBD2 8GB

Team Group Inc. Team-Elite-1333 4GB

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Golden Empire CL18-20-20 D4-3000 8GB

Golden Empire CL18-20-20 D4-3000 8GB