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Nanya Technology M2Y2G64TU8HD5B-AC 2GB
Samsung M471A1K43CBCBCRC 8GB

Nanya Technology M2Y2G64TU8HD5B-AC 2GB vs Samsung M471A1K43CBCBCRC 8GB

总分
star star star star star
Nanya Technology M2Y2G64TU8HD5B-AC 2GB

Nanya Technology M2Y2G64TU8HD5B-AC 2GB

总分
star star star star star
Samsung M471A1K43CBCBCRC 8GB

Samsung M471A1K43CBCBCRC 8GB

差异 规格 评论

差异

Nanya Technology M2Y2G64TU8HD5B-AC 2GB 需要考虑的原因
Nanya Technology M2Y2G64TU8HD5B-AC 2GB
报告一个错误
Samsung M471A1K43CBCBCRC 8GB 需要考虑的原因
Samsung M471A1K43CBCBCRC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 61
    左右 -61% 更低的延时
  • 更快的读取速度，GB/s
    9.3 left arrow 4
    测试中的平均数值
  • 更快的写入速度，GB/s
    6.1 left arrow 2,366.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2Y2G64TU8HD5B-AC 2GB
Samsung M471A1K43CBCBCRC 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    61 left arrow 38
  • 读取速度，GB/s
    4,614.7 left arrow 9.3
  • 写入速度，GB/s
    2,366.2 left arrow 6.1
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    772 left arrow 1493

Nanya Technology M2Y2G64TU8HD5B-AC 2GB RAM的比较

SK Hynix HYMP125U64CP8-S6 2GB
Apacer Technology 78.C1GMM.DFW0C 8GB

Samsung M471A1K43CBCBCRC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M393A2K40BB2-CTD 16GB
Samsung M393A2K40BB2-CTD 16GB
内存RAM
Nanya Technology M2Y2G64TU8HD5B-AC 2GB
Nanya Technology M2Y2G64TU8HD5B-AC 2GB
Samsung M471A1K43CBCBCRC 8GB
Samsung M471A1K43CBCBCRC 8GB
内存RAM
AMD R748G2400S2S 8GB
AMD R748G2400S2S 8GB
Samsung M378A1G43EB1-CRC 8GB
Samsung M378A1G43EB1-CRC 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2133C15-8GFT 8GB
G Skill Intl F4-2133C15-8GFT 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Samsung M393A2G40EB2-CTD 16GB
Samsung M393A2G40EB2-CTD 16GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Gloway International Co. Ltd. TYA4U2666D19321C 32GB
Gloway International Co. Ltd. TYA4U2666D19321C 32GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
G Skill Intl F4-3600C16-16GTZR 16GB
G Skill Intl F4-3600C16-16GTZR 16GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Essencore Limited IM4AGU88N26-GIIHA0 16GB
Essencore Limited IM4AGU88N26-GIIHA0 16GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Crucial Technology CT8G4SFS8213.C8FAD1 8GB
Crucial Technology CT8G4SFS8213.C8FAD1 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Mushkin 99[2/7/4]198F 8GB
Mushkin 99[2/7/4]198F 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston K821PJ-MIB 16GB
Kingston K821PJ-MIB 16GB
内存RAM