Nanya Technology M2Y51264TU88B0B-3C 512MB vs Corsair CMD16GX4M2B3200C16 8GB

总分

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

总分

Corsair CMD16GX4M2B3200C16 8GB

Corsair CMD16GX4M2B3200C16 8GB

差异规格评论

差异

Nanya Technology M2Y51264TU88B0B-3C 512MB

需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB

报告一个错误

更快的读取速度，GB/s

3 17.7

测试中的平均数值

Corsair CMD16GX4M2B3200C16 8GB

需要考虑的原因
Corsair CMD16GX4M2B3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 54

左右 -86% 更低的延时
更快的写入速度，GB/s

13.8 1,308.1

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y51264TU88B0B-3C 512MB

Corsair CMD16GX4M2B3200C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 29
读取速度，GB/s

3,573.5 17.7
写入速度，GB/s

1,308.1 13.8
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

371 3321

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMV16GX4M1A2400C16 16GB

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Corsair CMY16GX3M4A2133C8 4GB

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Micron Technology 16ATF2G64HZ-2G1B1 16GB

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Essencore Limited KD4AGS88A-26N1600 16GB

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Kingston KF560C40-16 16GB

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Kingston 99U5403-036.A00G 4GB

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InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Gloway International (HK) STK4U2400D17082C 8GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology CT8G4DFS824A.C8FBD1 8GB

Crucial Technology CT8G4DFS824A.C8FBD1 8GB