RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2Y51264TU88B0B-3C 512MB
Crucial Technology BL8G30C15U4BL.M8FE1 8GB
比较
Nanya Technology M2Y51264TU88B0B-3C 512MB vs Crucial Technology BL8G30C15U4BL.M8FE1 8GB
总分
Nanya Technology M2Y51264TU88B0B-3C 512MB
总分
Crucial Technology BL8G30C15U4BL.M8FE1 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB
报告一个错误
更快的读取速度,GB/s
3
17.3
测试中的平均数值
需要考虑的原因
Crucial Technology BL8G30C15U4BL.M8FE1 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
54
左右 -93% 更低的延时
更快的写入速度,GB/s
14.1
1,308.1
测试中的平均数值
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2Y51264TU88B0B-3C 512MB
Crucial Technology BL8G30C15U4BL.M8FE1 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
54
28
读取速度,GB/s
3,573.5
17.3
写入速度,GB/s
1,308.1
14.1
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
371
3367
Nanya Technology M2Y51264TU88B0B-3C 512MB RAM的比较
Nanya Technology M2Y51264TU88B0B-37 512MB
Kingston KF3200C20S4/8G 8GB
Crucial Technology BL8G30C15U4BL.M8FE1 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
A-DATA Technology DDR3 1600 4GB
A-DATA Technology AM1P26KCST2-BABS 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kllisre M378A1K43BB2-CRC 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Crucial Technology BL8G30C15U4BL.M8FE1 8GB
Samsung M378A1K43EB2-CWE 8GB
Kingston HP28D4S7D8HA-16X 16GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT8G4SFD824AC16FBD1 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT8G4SFS824A.C8FE 8GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
Samsung M378B5773DH0-CH9 2GB
Kingston KHX2400C1C14/16G 16GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology CT16G4SFD824A.M16FJ 16GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
G Skill Intl F5-6400J3239G16G 16GB
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
Kingston ACR256X64D3S1333C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C
G Skill Intl F4-4000C14-16GTZR 16GB
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
×
Bug description
Source link